PART |
Description |
Maker |
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz NPN Silicon RF Transistor
|
Infineon Technologies AG
|
PHT41470B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
PHT41410B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
AT-41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
AA028N1-99 |
230 GHz Low Noise Amplifier GT 14C 10#12 4#16 SKT PLUG 23-30 GHz Low Noise Amplifier
|
Alpha Industries Inc Alpha Industries, Inc. ALPHA[Alpha Industries] http://
|
INA-50311 INA-50311-BLK INA-50311-TR1 |
1 GHz的硅单片低噪声放大器 1 GHz Low Noise Silicon MMIC Amplifier
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] http://
|
BAT15-099 BAT1599 Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
AA038N1-99 |
261 GHz Low Noise Amplifier 26-41 GHz Low Noise Amplifier GT 4C 4#4 PIN PLUG
|
Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
|
UPC2713T-E3 |
1.2 GHz LOW NOISE WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
|
NEC Corp.
|
Q62702-F659 BFQ29 BFQ29P |
From old datasheet system NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA.)
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
AA035N1-00 AA035N2-00 |
286 GHz GaAs MMIC Low Noise Amplifier 28-36 GHz GaAs MMIC Low Noise Amplifier GT 12C 6#12 6#12 PIN PLUG
|
http:// Alpha Industries Inc ALPHA[Alpha Industries] Alpha Industries, Inc.
|
AA038N1-00 AA038N2-00 |
28-40 GHz的砷化镓MMIC低噪声放大器 GT 8C 2#0 6#12 PIN PLUG 280 GHz GaAs MMIC Low Noise Amplifier 28-40 GHz GaAs MMIC Low Noise Amplifier
|
Alpha Industries, Inc. Alpha Industries Inc ALPHA[Alpha Industries] http://
|